Tungsten & Molybdenum Vaega mo Ion Fa'apipi'i

O la matou kamupani faʻapitoa i le gaosiga o vaega tungsten ma molybdenum mo le faʻapipiʻiina o ion. O nei vaega e aofia ai le talipupuni cylinder o le electron emission cathode, o le emission plate, le tootoo faʻamaufaʻailoga tutotonu, le ipu filament o le arc tineui potu, ma isi. O le saito tele o tatou oloa ua faamamaina, o le density e sili atu nai lo le 99%, o mea faʻainisinia maualuga-vevela e maualuga atu nai lo mea masani tungsten ma molybdenum, ma o le ola tautua e faʻaumi tele foi.


  • Talosaga:Ion implanter mo le alamanuia semiconductor
  • Mea:Mama W, Mama Mo
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    Fa'amatalaga Oloa

    Faailoga o oloa

    Tungsten & Molybdenum Vaega mo Ion Fa'apipi'i

    Matou te tuʻuina atu mea faʻapitoa faʻapipiʻi tungsten ma molybdenum faʻapipiʻi maualuga. O a tatou oloa o loʻo i ai le tele o mea laiti, sili atu le mamafa nai lo le 99%, maualuga maualuga-vevela mea faʻainisinia nai lo mea masani tungsten-molybdenum, ma sili atu le umi o le auaunaga.

    O vaega fa'apipi'i ion e aofia ai:

    Electron emission cathode talipupuni pusa.

    laupapa fa'alauiloa.

    pou tutotonu.

    Pepa filament interrupter, ma isi.

    Ion Implantation Parts Information

    Oloa Igoa

    Vaega Fa'apipi'i Ion

    Meafaitino

    Tungsten mama (W) / Molybdenum mama (Mo)

    Mama

    99.95%

    Malosi

    W: 19.3g/cm³ / Mo: 10.2g/cm³

    Lisi Lisi

    W: 3410℃ / Mo: 2620℃

    Fa'apuna

    W: 5660 ℃ / Mo: 5560 ℃

    Fa'aaliga: Fa'asologa e tusa ai ma ata

    Fa'atosina o Ion

    Ion implantation o se faiga taua i le gaosiga semiconductor. Fa'apipi'i fa'apipi'i fa'apipi'i atomi mai fafo i totonu o le wafer e sui ai meafaitino, e pei o le fa'aogaina o le eletise po'o le fausaga tioata. O le ala o le ion beam o le totonugalemu lea o le implanter system. O iina, e faia ai ion, fa'atumauina, ma faatelevave agai i le wafer i ni saoasaoa maualuga.

    Tungsten ma Molybdenum Vaega mo Ion Faʻapipiʻi

    Pe a liua le puna o le ion i ions plasma, o le vevela galue i luga aʻe o le 2000 ° C ua fatuina. A o'o atu i fafo le ion beam, e maua mai ai foi le tele o le ion kinetic energy. E masani ona mu ma liusuavai uamea. O le mea lea, e manaʻomia le uʻamea mamalu ma le maualuga o le tele o densities e faʻamautu ai le taʻitaʻiga o le faʻamalo o le ion beam ma faʻateleina le umi o vaega. Tungsten ma molybdenum o mea sili ona lelei.

    Aisea e Filifilia Tungsten & Molybdenum Mea mo Ion Implantation Vaega

    Lelei le palaMalosi meafaitino maualugaLelei fa'avevela vevela

    Latou te fa'amautinoaina o lo'o fa'atupuina lelei ia ion ma taula'i sa'o i luga o le wafer i le ala fa'alava ma leai ni mea leaga.

    Ion totoina vaega tungsten molybdenum

    O Tatou Fa'amanuiaga

    Mea mata'utia maualuga
    Tekinolosi gaosiga maualuga
    Sa'o CNC masini
    Pulea lelei
    Pu'upu'u taimi tiliva

    Matou te faʻamautuina faʻavae i luga o le uluai gaosiga o le gaosiga o mea tungsten ma molybdenum. E ala i le faamamaina o saito, faʻafefeteina togafitiga, vacuum sintering ma le vevela isostatic oomi sintering densification, lona lua faʻamamaina saito ma pulea tekinolosi taʻavale, o le maualuga-vevela teteʻe, fetolofi teteʻe ma le ola tautua o mea tungsten ma molybdenum ua matua faaleleia.

    Semiconductor Ion Implantation Technology

    O le fa'apipi'iina o le ion o se faiga e masani ona fa'aogaina mo le fa'atosina ma le fa'aleleia o mea fa'amea semiconductor. O le faʻaaogaina o tekinolosi faʻapipiʻi ion ua matua faʻalauteleina le atinaʻeina o masini semiconductor ma le faʻalapotopotoga faʻapitoa faʻatasi. O le faia lea o le gaosiga o fesoʻotaʻiga tuʻufaʻatasia e ulufale atu i le vaitau o le tele-tele ma le ultra-large-scale (ULSI).

    fa'apipi'i ion semiconductor
    Pule Fa'atau-Amanda-2023001

    Faafesootai matou
    AmandaPule Fa'atau
    E-mail: amanda@winnersmetals.com
    Telefoni: +86 156 1977 8518(WhatsApp/Wechat)

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